Transferring porous layer from InP wafer based on the disturbance
Authors
Zhang, YangCao, Liang
Chai, Xiangyu
Liang, Kaihua
Han, Yong-Lu
Wang, Yanqi
Wang, Zuobin
Wang, Shuting
Weng, Zhankun
Issue Date
2017-01-16
Metadata
Show full item recordAbstract
We present a new method to transfer the three dimensional (3D) porous layer from InP wafer based on the disturbance, during electrochemical etching of n-InP (100) with chronopotentiometry with current ramp in 3 mol-L-1 NaCl solution. The potential bursting phenomenon was observed due to the disturbing instantaneously. In addition, the correlation between the amplitude of the potential and the porous layers separated from the InP wafer was discussed.Citation
Zhang Y, Cao L, Chai X, Liang K, Han Y, Wang Y, Wang Z, Wang S, Weng Z, Wang Z (2017) 'Transferring porous layer from InP wafer based on the disturbance', 2016 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO) - Chongqing, Institute of Electrical and Electronics Engineers Inc..Additional Links
https://ieeexplore.ieee.org/abstract/document/7824988Type
Conference papers, meetings and proceedingsLanguage
enISBN
9781509029457ae974a485f413a2113503eed53cd6c53
10.1109/3M-NANO.2016.7824988