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    Transferring porous layer from InP wafer based on the disturbance

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    Authors
    Zhang, Yang
    Cao, Liang
    Chai, Xiangyu
    Liang, Kaihua
    Han, Yong-Lu
    Wang, Yanqi
    Wang, Zuobin
    Wang, Shuting
    Weng, Zhankun
    Affiliation
    Changchun University of Science and Technology
    University of Bedfordshire
    Issue Date
    2017-01-16
    Subjects
    InP
    disturbance
    electrochemical etching
    transfer
    CPCR
    
    Metadata
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    Abstract
    We present a new method to transfer the three dimensional (3D) porous layer from InP wafer based on the disturbance, during electrochemical etching of n-InP (100) with chronopotentiometry with current ramp in 3 mol-L-1 NaCl solution. The potential bursting phenomenon was observed due to the disturbing instantaneously. In addition, the correlation between the amplitude of the potential and the porous layers separated from the InP wafer was discussed.
    Citation
    Zhang Y, Cao L, Chai X, Liang K, Han Y, Wang Y, Wang Z, Wang S, Weng Z, Wang Z (2017) 'Transferring porous layer from InP wafer based on the disturbance', 2016 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO) - Chongqing, Institute of Electrical and Electronics Engineers Inc..
    Publisher
    Institute of Electrical and Electronics Engineers Inc.
    URI
    http://hdl.handle.net/10547/624461
    DOI
    10.1109/3M-NANO.2016.7824988
    Additional Links
    https://ieeexplore.ieee.org/abstract/document/7824988
    Type
    Conference papers, meetings and proceedings
    Language
    en
    ISBN
    9781509029457
    ae974a485f413a2113503eed53cd6c53
    10.1109/3M-NANO.2016.7824988
    Scopus Count
    Collections
    Computing

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