Transferring porous layer from InP wafer based on the disturbance
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AbstractWe present a new method to transfer the three dimensional (3D) porous layer from InP wafer based on the disturbance, during electrochemical etching of n-InP (100) with chronopotentiometry with current ramp in 3 mol-L-1 NaCl solution. The potential bursting phenomenon was observed due to the disturbing instantaneously. In addition, the correlation between the amplitude of the potential and the porous layers separated from the InP wafer was discussed.
CitationZhang Y, Cao L, Chai X, Liang K, Han Y, Wang Y, Wang Z, Wang S, Weng Z, Wang Z (2017) 'Transferring porous layer from InP wafer based on the disturbance', 2016 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO) - Chongqing, Institute of Electrical and Electronics Engineers Inc..
TypeConference papers, meetings and proceedings