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dc.contributor.authorLi, Li
dc.contributor.authorWang, Zuobin
dc.contributor.authorLi, Wenjun
dc.contributor.authorPeng, Kuiqing
dc.contributor.authorZhang, Ziang
dc.contributor.authorYu, Miao
dc.contributor.authorSong, Zhengxun
dc.contributor.authorWeng, Zhankun
dc.contributor.authorWang, Dapeng
dc.contributor.authorZhao, Le
dc.date.accessioned2020-08-18T08:47:02Z
dc.date.available2020-08-18T08:47:02Z
dc.date.issued2015-09-29
dc.identifier.citationLi L, Wang Z, Li W, Peng K, Zhang Z, Yu M, Song Z, Weng Z, Wang D, Zhao L (2015) 'Fabrication of Pt nanowires with a diffraction-unlimited feature size by high-threshold lithography', Applied Physics Letters, 107 (13)en_US
dc.identifier.issn0003-6951
dc.identifier.doi10.1063/1.4932095
dc.identifier.urihttp://hdl.handle.net/10547/624434
dc.description.abstractAlthough the nanoscale world can already be observed at a diffraction-unlimited resolution using far-field optical microscopy, to make the step from microscopy to lithography still requires a suitable photoresist material system. In this letter, we consider the threshold to be a region with a width characterized by the extreme feature size obtained using a Gaussian beam spot. By narrowing such a region through improvement of the threshold sensitization to intensity in a high-threshold material system, the minimal feature size becomes smaller. By using platinum as the negative photoresist, we demonstrate that high-threshold lithography can be used to fabricate nanowire arrays with a scalable resolution along the axial direction of the linewidth from the micro- to the nanoscale using a nanosecond-pulsed laser source with a wavelength λ0 = 1064 nm. The minimal feature size is only several nanometers (sub λ0/100). Compared with conventional polymer resist lithography, the advantages of high-threshold lithography are sharper pinpoints of laser intensity triggering the threshold response and also higher robustness allowing for large area exposure by a less-expensive nanosecond-pulsed laser.en_US
dc.language.isoenen_US
dc.publisherAmerican Institute of Physics Inc.en_US
dc.relation.urlhttps://aip.scitation.org/doi/10.1063/1.4932095en_US
dc.rightsGreen - can archive pre-print and post-print or publisher's version/PDF
dc.subjectnanowiresen_US
dc.titleFabrication of Pt nanowires with a diffraction-unlimited feature size by high-threshold lithographyen_US
dc.typeArticleen_US
dc.contributor.departmentChangchun University of Science and Technologyen_US
dc.contributor.departmentUniversity of Bedfordshireen_US
dc.contributor.departmentBeijing Normal Universityen_US
dc.identifier.journalApplied Physics Lettersen_US
dc.date.updated2020-08-18T08:42:02Z
dc.description.note


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