Fabrication of Pt nanowires with a diffraction-unlimited feature size by high-threshold lithography
dc.contributor.author | Li, Li | |
dc.contributor.author | Wang, Zuobin | |
dc.contributor.author | Li, Wenjun | |
dc.contributor.author | Peng, Kuiqing | |
dc.contributor.author | Zhang, Ziang | |
dc.contributor.author | Yu, Miao | |
dc.contributor.author | Song, Zhengxun | |
dc.contributor.author | Weng, Zhankun | |
dc.contributor.author | Wang, Dapeng | |
dc.contributor.author | Zhao, Le | |
dc.date.accessioned | 2020-08-18T08:47:02Z | |
dc.date.available | 2020-08-18T08:47:02Z | |
dc.date.issued | 2015-09-29 | |
dc.identifier.citation | Li L, Wang Z, Li W, Peng K, Zhang Z, Yu M, Song Z, Weng Z, Wang D, Zhao L (2015) 'Fabrication of Pt nanowires with a diffraction-unlimited feature size by high-threshold lithography', Applied Physics Letters, 107 (13) | en_US |
dc.identifier.issn | 0003-6951 | |
dc.identifier.doi | 10.1063/1.4932095 | |
dc.identifier.uri | http://hdl.handle.net/10547/624434 | |
dc.description.abstract | Although the nanoscale world can already be observed at a diffraction-unlimited resolution using far-field optical microscopy, to make the step from microscopy to lithography still requires a suitable photoresist material system. In this letter, we consider the threshold to be a region with a width characterized by the extreme feature size obtained using a Gaussian beam spot. By narrowing such a region through improvement of the threshold sensitization to intensity in a high-threshold material system, the minimal feature size becomes smaller. By using platinum as the negative photoresist, we demonstrate that high-threshold lithography can be used to fabricate nanowire arrays with a scalable resolution along the axial direction of the linewidth from the micro- to the nanoscale using a nanosecond-pulsed laser source with a wavelength λ0 = 1064 nm. The minimal feature size is only several nanometers (sub λ0/100). Compared with conventional polymer resist lithography, the advantages of high-threshold lithography are sharper pinpoints of laser intensity triggering the threshold response and also higher robustness allowing for large area exposure by a less-expensive nanosecond-pulsed laser. | en_US |
dc.language.iso | en | en_US |
dc.publisher | American Institute of Physics Inc. | en_US |
dc.relation.url | https://aip.scitation.org/doi/10.1063/1.4932095 | en_US |
dc.rights | Green - can archive pre-print and post-print or publisher's version/PDF | |
dc.subject | nanowires | en_US |
dc.title | Fabrication of Pt nanowires with a diffraction-unlimited feature size by high-threshold lithography | en_US |
dc.type | Article | en_US |
dc.contributor.department | Changchun University of Science and Technology | en_US |
dc.contributor.department | University of Bedfordshire | en_US |
dc.contributor.department | Beijing Normal University | en_US |
dc.identifier.journal | Applied Physics Letters | en_US |
dc.date.updated | 2020-08-18T08:42:02Z | |
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