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dc.contributor.authorXu, Jia
dc.contributor.authorWang, Zuobin
dc.contributor.authorZhang, Ziang
dc.contributor.authorWang, Dapeng
dc.contributor.authorWeng, Zhankun
dc.date.accessioned2020-07-23T10:33:33Z
dc.date.available2020-07-23T10:33:33Z
dc.date.issued2015-06-12
dc.identifier.citationXu J, Wang Z, Zhang Z, Wang D, Weng Z (2015) 'Effective intensity distributions used for direct laser interference exposure', RSC Advances, 5 (68), pp.54947-54951.en_US
dc.identifier.issn2046-2069
dc.identifier.doi10.1039/c5ra06504f
dc.identifier.urihttp://hdl.handle.net/10547/624274
dc.description.abstractThis paper presents a method to obtain periodic structures with different feature shapes using direct laser interference lithography. In the method, the desired structures are produced by controlling the effective intensity distributions of interference patterns during the exposure process. The effective intensity distributions are adjusted by changing the exposure beam intensity based on the material modification thresholds. In the simulations and experiments, different exposure intensities were used to study the interactions between the effective intensity distributions and the materials, and direct four- and six-beam laser interference lithography systems were set up to pattern silicon wafers. The shapes and sizes of the fabricated surface structures changed with the effective intensities. The experimental results are in accordance with the theoretical models and simulations.en_US
dc.language.isoenen_US
dc.publisherRoyal Society of Chemistryen_US
dc.relation.urlhttps://pubs.rsc.org/en/content/articlelanding/2015/ra/c5ra06504f#!divAbstracten_US
dc.rightsGreen - can archive pre-print and post-print or publisher's version/PDF
dc.subjectDirect laser interference technologyen_US
dc.titleEffective intensity distributions used for direct laser interference exposureen_US
dc.typeArticleen_US
dc.identifier.eissn2046-2069
dc.contributor.departmentChinese Academy of Sciencesen_US
dc.contributor.departmentChangchun University of Science and Technologyen_US
dc.contributor.departmentUniversity of Bedfordshireen_US
dc.identifier.journalRSC Advancesen_US
dc.date.updated2020-07-23T10:01:25Z
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