Effects of azimuthal angles on laser interference lithography

Abstract

This paper discusses the effects of azimuthal angles on two-, three-, and four-beam laser interference. In two- or three-beam laser interference, periodic surface structures of lines or dots were obtained. In fourbeam laser interference with the polarization mode of TE-TM-TE-TM, the modulation in a particular direction was formed and calculated. In the work, a He-Ne laser system was used to simulate two-, three-, and four-beam laser interference, and the interference pattern was detected by a CCD. A high-power Nd:YAG laser interference lithography system was set up to pattern silicon wafers. In the experiments, one azimuthal angle was changed every time to form interference patterns when polarization states were fixed and incident angles were equal. The experimental results have shown that the azimuthal angle affects the periods and feature sizes of the interference patterns and the fabricated surface structures, which are in accordance with the theoretical and computer simulation results.