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dc.contributor.authorZhang, Wei
dc.contributor.authorShi, Zhenwu
dc.contributor.authorHuo, Dayun
dc.contributor.authorGuo, Xiaoxiang
dc.contributor.authorZhang, Feng
dc.contributor.authorChen, Linsen
dc.contributor.authorWang, Qinhua
dc.contributor.authorZhang, Baoshen
dc.contributor.authorPeng, Changsi
dc.date.accessioned2020-07-16T10:41:28Z
dc.date.available2020-07-16T10:41:28Z
dc.date.issued2018-04-12
dc.identifier.citationZhang W, Shi Z, Huo D, Guo X, Zhang F, Chen L, Wang Q, Zhang B, Peng C (2018) 'In-situ laser nano-patterning for ordered InAs/GaAs(001) quantum dot growth', Applied Physics Letters, 112 (153108)en_US
dc.identifier.issn0003-6951
dc.identifier.doi10.1063/1.5016096
dc.identifier.urihttp://hdl.handle.net/10547/624241
dc.description.abstractA study of in-situ laser interference nano-patterning on InGaAs wetting layers was carried out during InAs/GaAs (001) quantum dot molecular beam epitaxy growth. Periodic nano-islands with heights of a few atomic layers were obtained via four-beam laser interference irradiation on the InGaAs wetting layer at an InAs coverage of 0.9 monolayer. The quantum dots nucleated preferentially at edges of nano-islands upon subsequent deposition of InAs on the patterned surface. When the nano-islands are sufficiently small, the patterned substrate could be spontaneously re-flattened and an ordered quantum dot array could be produced on the smooth surface. This letter discusses the mechanisms of nano-patterning and ordered quantum dot nucleation in detail. This study provides a potential technique leading to site-controlled, high-quality quantum dot fabrication.en_US
dc.language.isoenen_US
dc.publisherAIP Publishingen_US
dc.relation.urlhttps://aip.scitation.org/doi/10.1063/1.5016096en_US
dc.rightsGreen - can archive pre-print and post-print or publisher's version/PDF
dc.subjectin situ laser irradiationen_US
dc.titleIn-situ laser nano-patterning for ordered InAs/GaAs(001) quantum dot growthen_US
dc.typeArticleen_US
dc.contributor.departmentSoochow Universityen_US
dc.contributor.departmentChinese Academy of Scienceen_US
dc.identifier.journalApplied Physics Lettersen_US
dc.date.updated2020-07-16T10:37:40Z
dc.description.noteover 3m from publication


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