In-situ laser nano-patterning for ordered InAs/GaAs(001) quantum dot growth
Subjectsin situ laser irradiation
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AbstractA study of in-situ laser interference nano-patterning on InGaAs wetting layers was carried out during InAs/GaAs (001) quantum dot molecular beam epitaxy growth. Periodic nano-islands with heights of a few atomic layers were obtained via four-beam laser interference irradiation on the InGaAs wetting layer at an InAs coverage of 0.9 monolayer. The quantum dots nucleated preferentially at edges of nano-islands upon subsequent deposition of InAs on the patterned surface. When the nano-islands are sufficiently small, the patterned substrate could be spontaneously re-flattened and an ordered quantum dot array could be produced on the smooth surface. This letter discusses the mechanisms of nano-patterning and ordered quantum dot nucleation in detail. This study provides a potential technique leading to site-controlled, high-quality quantum dot fabrication.
CitationZhang W, Shi Z, Huo D, Guo X, Zhang F, Chen L, Wang Q, Zhang B, Peng C (2018) 'In-situ laser nano-patterning for ordered InAs/GaAs(001) quantum dot growth', Applied Physics Letters, 112 (153108)
JournalApplied Physics Letters