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    In-situ laser nano-patterning for ordered InAs/GaAs(001) quantum dot growth

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    Authors
    Zhang, Wei
    Shi, Zhenwu
    Huo, Dayun
    Guo, Xiaoxiang
    Zhang, Feng
    Chen, Linsen
    Wang, Qinhua
    Zhang, Baoshen
    Peng, Changsi
    Affiliation
    Soochow University
    Chinese Academy of Science
    Issue Date
    2018-04-12
    Subjects
    in situ laser irradiation
    
    Metadata
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    Abstract
    A study of in-situ laser interference nano-patterning on InGaAs wetting layers was carried out during InAs/GaAs (001) quantum dot molecular beam epitaxy growth. Periodic nano-islands with heights of a few atomic layers were obtained via four-beam laser interference irradiation on the InGaAs wetting layer at an InAs coverage of 0.9 monolayer. The quantum dots nucleated preferentially at edges of nano-islands upon subsequent deposition of InAs on the patterned surface. When the nano-islands are sufficiently small, the patterned substrate could be spontaneously re-flattened and an ordered quantum dot array could be produced on the smooth surface. This letter discusses the mechanisms of nano-patterning and ordered quantum dot nucleation in detail. This study provides a potential technique leading to site-controlled, high-quality quantum dot fabrication.
    Citation
    Zhang W, Shi Z, Huo D, Guo X, Zhang F, Chen L, Wang Q, Zhang B, Peng C (2018) 'In-situ laser nano-patterning for ordered InAs/GaAs(001) quantum dot growth', Applied Physics Letters, 112 (153108)
    Publisher
    AIP Publishing
    Journal
    Applied Physics Letters
    URI
    http://hdl.handle.net/10547/624241
    DOI
    10.1063/1.5016096
    Additional Links
    https://aip.scitation.org/doi/10.1063/1.5016096
    Type
    Article
    Language
    en
    ISSN
    0003-6951
    ae974a485f413a2113503eed53cd6c53
    10.1063/1.5016096
    Scopus Count
    Collections
    Computing

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