In-situ laser nano-patterning for ordered InAs/GaAs(001) quantum dot growth
Authors
Zhang, WeiShi, Zhenwu
Huo, Dayun
Guo, Xiaoxiang
Zhang, Feng
Chen, Linsen
Wang, Qinhua
Zhang, Baoshen
Peng, Changsi
Issue Date
2018-04-12Subjects
in situ laser irradiation
Metadata
Show full item recordAbstract
A study of in-situ laser interference nano-patterning on InGaAs wetting layers was carried out during InAs/GaAs (001) quantum dot molecular beam epitaxy growth. Periodic nano-islands with heights of a few atomic layers were obtained via four-beam laser interference irradiation on the InGaAs wetting layer at an InAs coverage of 0.9 monolayer. The quantum dots nucleated preferentially at edges of nano-islands upon subsequent deposition of InAs on the patterned surface. When the nano-islands are sufficiently small, the patterned substrate could be spontaneously re-flattened and an ordered quantum dot array could be produced on the smooth surface. This letter discusses the mechanisms of nano-patterning and ordered quantum dot nucleation in detail. This study provides a potential technique leading to site-controlled, high-quality quantum dot fabrication.Citation
Zhang W, Shi Z, Huo D, Guo X, Zhang F, Chen L, Wang Q, Zhang B, Peng C (2018) 'In-situ laser nano-patterning for ordered InAs/GaAs(001) quantum dot growth', Applied Physics Letters, 112 (153108)Publisher
AIP PublishingJournal
Applied Physics LettersAdditional Links
https://aip.scitation.org/doi/10.1063/1.5016096Type
ArticleLanguage
enISSN
0003-6951ae974a485f413a2113503eed53cd6c53
10.1063/1.5016096