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    Study of in situ laser modification of InAs/GaAs quantum dots

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    Authors
    Miao, Lili
    Yang, Linyun
    Yang, Xinning
    Zhuang, Siyi
    Shi, Zhenwu
    Peng, Changsi
    Affiliation
    Soochow University
    University of Bedfordshire
    Issue Date
    2019-12-31
    Subjects
    in situ laser irradiation
    
    Metadata
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    Abstract
    We have investigated the modification of self-assembled InAs/GaAs quantum dots (QDs) by in situ pulsed laser irradiation. The QDs were fabricated by molecular beam epitaxy (MBE) in Stranski-Krastanov mode at 480℃ and then at the same temperature the pulsed laser was in situ introduced to modify the QDs with different energy. The dependence of morphology evolution on irradiation energy was carefully studied by AFM testing. The results show that laser excitation can enable both desorption and diffusion of In atoms which may induce strong modification on the InAs QDs. For irradiation of a moderate energy, the 3D dot-like InAs QD will transform into 2D oval-shaped island; Once the irradiation energy is high enough, the InAs QDs will be completely removed off from the surface. The involved mechanism is also discussed. Herein, we have proposed a new approach of fabricating QDs which is high-efficient, pollution-free, oxidation-free and defect-resistant and it is believed in the near future, it may find wide applications in both the fundamental physics research and emerging device manufacture.
    Citation
    Miao L, Yang L, Yang X, Zhuang S, Shi Z, Peng C (2019) 'Study of in situ laser modification of InAs/GaAs quantum dots', Applied Optics and Photonics China (AOPC2019) - Beijing, SPIE.
    Publisher
    SPIE
    Journal
    AOPC 2019: NANOPHOTONICS
    URI
    http://hdl.handle.net/10547/624156
    DOI
    10.1117/12.2547676
    Additional Links
    https://www.spiedigitallibrary.org/conference-proceedings-of-spie/11339/113390H/Study-of-in-situ-laser-modification-of-InAs-GaAs-quantum/10.1117/12.2547676.short
    Type
    Conference papers, meetings and proceedings
    Language
    en
    ISSN
    0277-786X
    EISSN
    1996-756X
    ae974a485f413a2113503eed53cd6c53
    10.1117/12.2547676
    Scopus Count
    Collections
    Computing

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