Realization of periodic InAs QDs by in-situ four-beam laser-interference irradiation on the wetting layer
Suzhou Institute of Nano-Tech and Nano-Bionics
Jiangsu Entry-Exit Inspection and Quarantine Bureau
University of Bedfordshire
Subjectsin situ laser irradiation
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AbstractIn this paper, during InAs/GaAs (001) quantum dot molecular beam epitaxy growth, four-beam pulsed laser-interference was used to in-situ irradiate on the wetting layer with an InAs coverage of 1.1 monolayer. Significant atomic layer removal and periodic nanostructures including nanoholes and nanoislands were obtained. These periodic nanostructures had a significant influence on quantum dot growth. Especially for the structure of nano-island, quantum dots preferentially nucleated at the edges of them. When the nano-island size becomes small enough, ordered quantum dot arrays are directly achieved on smooth GaAs surface with a follow-up InAs deposition accompanied by the disappearance of the nanoislands. This finding provides a potential technique leading to site-controlled and defect-free quantum dot fabrication.
CitationYang L, Yang X, Miao L, Zhang W, Huo D, Shi Z, Peng C (2018) 'Realization of periodic InAs QDs by in-situ four-beam laser-interference irradiation on the wetting layer', SPIE/COS Photonics Asia - Beijing, SPIE.
JournalAOPC 2019: NANOPHOTONICS
TypeConference papers, meetings and proceedings