Show simple item record

dc.contributor.authorGuo, Xiaoxiang
dc.contributor.authorHuo, Dayun
dc.contributor.authorZhang, Wei
dc.contributor.authorXu, Chao
dc.contributor.authorDeng, Changwei
dc.contributor.authorPeng, Changsi
dc.date.accessioned2020-07-07T10:57:32Z
dc.date.available2020-07-07T10:57:32Z
dc.date.issued2016-12-31
dc.identifier.citationGuo X, Huo D, Zhang W, Xu C, Deng C, Peng C (2016) 'Surface modification on GaAs by in-situ pulsed UV laser', Eighth International Symposium on Advanced Optical Manufacturing and Testing Technology (AOMATT2016) - Suzhou, SPIE.en_US
dc.identifier.issn0277-786X
dc.identifier.doi10.1117/12.2242704
dc.identifier.urihttp://hdl.handle.net/10547/624154
dc.description.abstractA single-beam of UV pulse laser (355nm/10ns) was used to irradiate the as-grown GaAs (100) surface in-situ in molecular beam epitaxy with pulse numbers from 1 to 6 at laser intensity of 52.5 mJ/cm2/pulse. It was observed that the irradiated GaAs surface morphology depended strongly on the pulse number. For single pulse irradiation, small nano-dots (NDs) with high density were produced on the surface. The size of NDs increased and nano-rings (NRs) were observed with the increasing of pulse numbers. The surface was completely dominated by NRs at 6 pulses of laser irradiating. Arsenic atoms were selectively desorbed away from GaAs surface by laser irradiation leaving plenty of naked Ga-atoms to form small metal-dots of Gallium. Ga-rich NDs transferred to Ga droplets with the increased number of the laser pulses. NRs formed just as the traditional droplet-epitaxy process when the droplet size grew up to a critical size. Nano-drill process played an important role in the process. This research was supposed to provide a novel and promising solution for more controllable nano-fabrication of various semiconductor materials of MBE growing, including but not limited to GaAs reported here.en_US
dc.language.isoenen_US
dc.publisherSPIEen_US
dc.relation.urlhttps://www.spiedigitallibrary.org/conference-proceedings-of-spie/9686/96860P/Surface-modification-on-GaAs-by-in-situ-pulsed-UV-laser/10.1117/12.2242704.shorten_US
dc.subjectsurface modificationen_US
dc.titleSurface modification on GaAs by in-situ pulsed UV laseren_US
dc.typeConference papers, meetings and proceedingsen_US
dc.identifier.eissn1996-756X
dc.contributor.departmentSoochow Universityen_US
dc.identifier.journalAOPC 2019: NANOPHOTONICSen_US
dc.date.updated2020-07-07T10:39:22Z
dc.description.note


This item appears in the following Collection(s)

Show simple item record