Anti-reflection structures fabricated by direct laser interference technology under different ambiances
Affiliation
University of BedfordshireIssue Date
2013-08Subjects
anti-reflection structuresblack silicon
direct laser interference technology
antireflection coatings
elemental semiconductors
impurities
laser materials processing
light reflection
silicon
Metadata
Show full item recordAbstract
In this paper, we take the strategy of direct laser interference technology to modify the silicon surface under air and sulphur hexafluoride (SF6) gas ambiance conditions. With the investigation of optical properties, the silicon spike structures (known as black silicon) which were fabricated in the SF6 ambiance showed the excellent ability of reducing light reflection with a broadband spectrum. For comparison, well-defined microcone structures were fabricated in the air ambiance. After hydrofluoric (HF) acid wiping off the oxides on the surface, micro cone structures have shown the anti-reflection function as well and its reflective behaviour was dependent on the structural depth relatively. Due to a high impurities concentration of spike structures obtained in the SF6 ambiance, applications of sulphur-doped black silicon would be limited. To obtain large-scale uniform structures, direct laser interference technology in the air ambiance could be an alternative.Citation
Wang, D., Yue, Y., Zhang, Z., Li, D., Maple, C., Wang, Z. (2013) 'Anti-reflection structures fabricated by direct laser interference technology under different ambiances,' Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO), 2013 International Conference on, Suzhou, China, 26-30 August.Publisher
IEEEType
Conference papers, meetings and proceedingsLanguage
enISBN
9781479912100Sponsors
This work was supported by National Key Basic Research Program of China (973 Program No. 2012CB326400 and No. 2012CB326406), Special Development Program of Central Financial Support to Local Universities (No. 2011-183), EU FP7 (LaserNaMi No.247644; ECNANOMAN No.269219), International Science and Technology Cooperation Program of China (No. 2012DFA11070), National Natural Science Foundation Program of China (No. 60940035 and No. 61176002), Doctoral Program of Higher Education of China (No. 20112216110002), Jilin Provincial Science and Technology Program (No. 201115157, No. 20090401 and No. 20110704), Guangdong Science and Technology Program (No. 2009B091300006 and No. 2011B010700101), Science and Technology Program of Changchun City (No. 09GH07 and No. 11KP04), and Program of Changchun University of Science and Technology (No. 129666 and No. XJJLG201101).ae974a485f413a2113503eed53cd6c53
10.1109/3M-NANO.2013.6737388