Direct modification of silicon surface by nanosecond laser interference lithography
laser interference lithography
micro and nano structures
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AbstractPeriodic and quasi-periodic structures on silicon surface have numerous significant applications in photoelectronics and surface engineering. A number of technologies have been developed to fabricate the structures in various research fields. In this work, we take the strategy of direct nanosecond laser interference lithography technology, and focus on the silicon material to create different well-defined surface structures based on theoretical analysis of the formation of laser interference patterns. Two, three and four-beam laser interference systems were set up to fabricate the grating, regular triangle and square structures on silicon surfaces, respectively. From the AFM micrographs, the critical features of structures have a dependence on laser fluences. For a relative low laser fluence, grating and dot structures formed with bumps due to the Marangoni Effect. With the increase of laser fluences, melt and evaporation behaviors can be responsible for the laser modification. By properly selecting the process parameters, well-defined grating and dot structures can been achieved. It can be demonstrated that direct laser interference lithography is a facile and efficient technology with the advantage of a single process procedure over macroscale areas for the fabrication of micro and nano structures.
CitationWang, D., Wang, Z., Zhang, Z., Yue, Y., Li, D. and Maple, C., (2013) 'Direct modification of silicon surface by nanosecond laser interference lithography' Applied Surface Science Vol 282 pp67-72.
JournalApplied Surface Science
SponsorsThis work was supported by National Key Basic Research Program of China (973 Program nos. 2012CB326400 and 2012CB326406), Special Development Program of Central Financial Support to Local Universities (no. 2011-183), EU FP7 (LaserNaMi no. 247644; ECNANOMAN no. 269219), International Science and Technology Cooperation Program of China (no. 2012DFA11070), National Natural Science Foundation Program of China (nos. 60940035 and 61176002), Doctoral Program of Higher Education of China (no. 20112216110002), Jilin Provincial Science and Technology Program (nos. 201115157, 20090401 and 20110704), Guangdong Science and Technology Program (nos. 2009B091300006 and 2011B010700101), Science and Technology Program of Changchun City (nos. 09GH07 and 11KP04), and Program of Changchun University of Science and Technology (nos. 129666 and XJJLG201101).