Show simple item record

dc.contributor.authorWang, Dapengen_GB
dc.contributor.authorWang, Zuobinen_GB
dc.contributor.authorZhang, Ziangen_GB
dc.contributor.authorYue, Yongen_GB
dc.contributor.authorLi, Dayouen_GB
dc.contributor.authorMaple, Carstenen_GB
dc.date.accessioned2013-03-25T11:18:29Z
dc.date.available2013-03-25T11:18:29Z
dc.date.issued2013
dc.identifier.citationWang, D., Wang, Z., Zhang, Z., Yue, Y., Li, D. & Maple, C. (2013) 'Effects of polarization on four-beam laser interference lithography', Applied Physics Letters, 102 (8), pp.081903.en_GB
dc.identifier.issn00036951
dc.identifier.doi10.1063/1.4793752
dc.identifier.urihttp://hdl.handle.net/10547/275814
dc.description.abstractThis paper demonstrates that polarization plays an important role in the formation of interference patterns, pattern contrasts, and periods in four-beam interference lithography. Three different polarization modes are presented to study the effects of polarization on four-beam laser interference based on theoretical analysis, simulations, and experiments. A four-beam laser interference system was set up to modify the silicon surface. It was found that the secondary periodicity or modulation was the result of the misaligned or unequal incident angles only in the case of the TE-TE-TM-TM mode. The resulting patterns have shown a good correspondence with the theoretical analysis and simulations.
dc.language.isoenen
dc.publisherAmerican Institute of Physicsen_GB
dc.relation.urlhttp://link.aip.org/link/APPLAB/v102/i8/p081903/s1&Agg=doien_GB
dc.subjectelemental semiconductorsen_GB
dc.subjectlaser beamsen_GB
dc.titleEffects of polarization on four-beam laser interference lithographyen
dc.typeArticleen
dc.contributor.departmentChangchun University of Science and Technologyen_GB
dc.contributor.departmentUniversity of Bedfordshireen_GB
dc.identifier.journalApplied Physics Lettersen_GB
html.description.abstractThis paper demonstrates that polarization plays an important role in the formation of interference patterns, pattern contrasts, and periods in four-beam interference lithography. Three different polarization modes are presented to study the effects of polarization on four-beam laser interference based on theoretical analysis, simulations, and experiments. A four-beam laser interference system was set up to modify the silicon surface. It was found that the secondary periodicity or modulation was the result of the misaligned or unequal incident angles only in the case of the TE-TE-TM-TM mode. The resulting patterns have shown a good correspondence with the theoretical analysis and simulations.


This item appears in the following Collection(s)

Show simple item record