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    Effects of polarization on four-beam laser interference lithography

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    Authors
    Wang, Dapeng
    Wang, Zuobin
    Zhang, Ziang
    Yue, Yong
    Li, Dayou
    Maple, Carsten
    Affiliation
    Changchun University of Science and Technology
    University of Bedfordshire
    Issue Date
    2013
    Subjects
    elemental semiconductors
    laser beams
    
    Metadata
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    Abstract
    This paper demonstrates that polarization plays an important role in the formation of interference patterns, pattern contrasts, and periods in four-beam interference lithography. Three different polarization modes are presented to study the effects of polarization on four-beam laser interference based on theoretical analysis, simulations, and experiments. A four-beam laser interference system was set up to modify the silicon surface. It was found that the secondary periodicity or modulation was the result of the misaligned or unequal incident angles only in the case of the TE-TE-TM-TM mode. The resulting patterns have shown a good correspondence with the theoretical analysis and simulations.
    Citation
    Wang, D., Wang, Z., Zhang, Z., Yue, Y., Li, D. & Maple, C. (2013) 'Effects of polarization on four-beam laser interference lithography', Applied Physics Letters, 102 (8), pp.081903.
    Publisher
    American Institute of Physics
    Journal
    Applied Physics Letters
    URI
    http://hdl.handle.net/10547/275814
    DOI
    10.1063/1.4793752
    Additional Links
    http://link.aip.org/link/APPLAB/v102/i8/p081903/s1&Agg=doi
    Type
    Article
    Language
    en
    ISSN
    00036951
    ae974a485f413a2113503eed53cd6c53
    10.1063/1.4793752
    Scopus Count
    Collections
    Centre for Research in Distributed Technologies (CREDIT)

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