Improved efficiency of microcrystalline silicon thin film solar cells with wide band-gap CdS buffer layer

2.50
Hdl Handle:
http://hdl.handle.net/10547/622396
Title:
Improved efficiency of microcrystalline silicon thin film solar cells with wide band-gap CdS buffer layer
Authors:
Jabeen, Maria; Haxha, Shyqyri ( 0000-0002-9641-5520 ) ; Charlton, Martin D.B.
Abstract:
In this paper, we have reported a new structure based upon an optical simulation of maximum light trapping and management in microcrystalline silicon thin film solar cells by using multi texture schemes and introducing an n-type cadmium sulphide (CdS) buffer layer with the goal of extreme light coupling and absorption in silicon absorber layer. Photon absorption was improved by optimising the front and back texturing of transparent conductive oxide (TCO) layers and variation in buffer layer thickness. We have demonstrated that light trapping can be improved with proposed geometry of 1μm thick crystalline silicon absorber layer below a thin layer of wide band gap material. We have improved the short circuit current densities by 1.35mA/cm2 resulting in a total short circuit current of 25 mA/cm2 and conversion efficiency of 9% with the addition of CdS buffer layer and multi textures, under global AM1.5 conditions. In this study, we have used 2 Dimensional Full Vectorial Finite Element (2DFVFEM) to design and optimize the proposed light propagation in solar cell structure configuration. Our simulation results show that interface morphology of CdS layer thickness and textures with different aspect and ratios have the most prominent influence on solar cell performance in terms of both short circuit current and quantum efficiency.
Affiliation:
University of Bedfordshire; University of Southampton
Citation:
Jabeen M, Haxha S, Charlton M. (2017) 'Improved efficiency of microcrystalline silicon thin film solar cells with wide band-gap CdS buffer layer', IEEE Photonics Journal, 9 (6), pp.1-15.
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
IEEE Photonics Journal
Issue Date:
1-Dec-2017
URI:
http://hdl.handle.net/10547/622396
DOI:
10.1109/JSEN.2017.2704098
Additional Links:
http://ieeexplore.ieee.org/document/8088349/
Type:
Article
Language:
en
ISSN:
1943-0655
EISSN:
1943-0655
Appears in Collections:
Engineering

Full metadata record

DC FieldValue Language
dc.contributor.authorJabeen, Mariaen
dc.contributor.authorHaxha, Shyqyrien
dc.contributor.authorCharlton, Martin D.B.en
dc.contributor.illustratorhttp://ieeexplore.ieee.org/document/8088349/keywords-
dc.date.accessioned2017-11-20T10:57:22Z-
dc.date.available2017-11-20T10:57:22Z-
dc.date.issued2017-12-01-
dc.identifier.citationJabeen M, Haxha S, Charlton M. (2017) 'Improved efficiency of microcrystalline silicon thin film solar cells with wide band-gap CdS buffer layer', IEEE Photonics Journal, 9 (6), pp.1-15.en
dc.identifier.issn1943-0655-
dc.identifier.doi10.1109/JSEN.2017.2704098-
dc.identifier.urihttp://hdl.handle.net/10547/622396-
dc.description.abstractIn this paper, we have reported a new structure based upon an optical simulation of maximum light trapping and management in microcrystalline silicon thin film solar cells by using multi texture schemes and introducing an n-type cadmium sulphide (CdS) buffer layer with the goal of extreme light coupling and absorption in silicon absorber layer. Photon absorption was improved by optimising the front and back texturing of transparent conductive oxide (TCO) layers and variation in buffer layer thickness. We have demonstrated that light trapping can be improved with proposed geometry of 1μm thick crystalline silicon absorber layer below a thin layer of wide band gap material. We have improved the short circuit current densities by 1.35mA/cm2 resulting in a total short circuit current of 25 mA/cm2 and conversion efficiency of 9% with the addition of CdS buffer layer and multi textures, under global AM1.5 conditions. In this study, we have used 2 Dimensional Full Vectorial Finite Element (2DFVFEM) to design and optimize the proposed light propagation in solar cell structure configuration. Our simulation results show that interface morphology of CdS layer thickness and textures with different aspect and ratios have the most prominent influence on solar cell performance in terms of both short circuit current and quantum efficiency.en
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.urlhttp://ieeexplore.ieee.org/document/8088349/en
dc.rightsGreen - can archive pre-print and post-print or publisher's version/PDF-
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.subjectimproved efficiencyen
dc.subjectsolar cellsen
dc.titleImproved efficiency of microcrystalline silicon thin film solar cells with wide band-gap CdS buffer layeren
dc.typeArticleen
dc.identifier.eissn1943-0655-
dc.contributor.departmentUniversity of Bedfordshireen
dc.contributor.departmentUniversity of Southamptonen
dc.identifier.journalIEEE Photonics Journalen
dc.date.updated2017-11-20T10:53:55Z-
dc.description.noteopen access-
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