Effects of laser fluence on silicon modification by four-beam laser interference

2.50
Hdl Handle:
http://hdl.handle.net/10547/622030
Title:
Effects of laser fluence on silicon modification by four-beam laser interference
Authors:
Zhao, Le; Wang, Zuobin; Zhang, Jinjin; Yu, Miao; Li, Siwei; Li, Dayou; Yue, Yong
Abstract:
This paper discusses the effects of laser fluence on silicon modification by four-beam laser interference. In this work, four-beam laser interference was used to pattern single crystal silicon wafers for the fabrication of surface structures, and the number of laser pulses was applied to the process in air. By controlling the parameters of laser irradiation, different shapes of silicon structures were fabricated. The results were obtained with the single laser fluence of 354 mJ/cm, 495 mJ/cm, and 637 mJ/cm, the pulse repetition rate of 10 Hz, the laser exposure pulses of 30, 100, and 300, the laser wavelength of 1064 nm, and the pulse duration of 7-9 ns. The effects of the heat transfer and the radiation of laser interference plasma on silicon wafer surfaces were investigated. The equations of heat flow and radiation effects of laser plasma of interfering patterns in a four-beam laser interference distribution were proposed to describe their impacts on silicon wafer surfaces. The experimental results have shown that the laser fluence has to be properly selected for the fabrication of well-defined surface structures in a four-beam laser interference process. Laser interference patterns can directly fabricate different shape structures for their corresponding applications.
Affiliation:
Changchun University of Science and Technology; University of Bedfordshire; Jiaotong-Liverpool University
Citation:
Zhao L., Wang Z., Zhang J., Yu M., Li S., Li D., Yue Y. (2015) 'Effects of laser fluence on silicon modification by four-beam laser interference', Journal of Applied Physics, 118 (23).
Publisher:
American Institute of Physics Inc.
Journal:
Journal of Applied Physics
Issue Date:
17-Dec-2015
URI:
http://hdl.handle.net/10547/622030
DOI:
10.1063/1.4937579
Additional Links:
http://aip.scitation.org/doi/abs/10.1063/1.4937579?journalCode=jap
Type:
Article
Language:
en
ISSN:
0021-8979
Appears in Collections:
Engineering

Full metadata record

DC FieldValue Language
dc.contributor.authorZhao, Leen
dc.contributor.authorWang, Zuobinen
dc.contributor.authorZhang, Jinjinen
dc.contributor.authorYu, Miaoen
dc.contributor.authorLi, Siweien
dc.contributor.authorLi, Dayouen
dc.contributor.authorYue, Yongen
dc.date.accessioned2017-02-27T11:48:25Z-
dc.date.available2017-02-27T11:48:25Z-
dc.date.issued2015-12-17-
dc.identifier.citationZhao L., Wang Z., Zhang J., Yu M., Li S., Li D., Yue Y. (2015) 'Effects of laser fluence on silicon modification by four-beam laser interference', Journal of Applied Physics, 118 (23).en
dc.identifier.issn0021-8979-
dc.identifier.doi10.1063/1.4937579-
dc.identifier.urihttp://hdl.handle.net/10547/622030-
dc.description.abstractThis paper discusses the effects of laser fluence on silicon modification by four-beam laser interference. In this work, four-beam laser interference was used to pattern single crystal silicon wafers for the fabrication of surface structures, and the number of laser pulses was applied to the process in air. By controlling the parameters of laser irradiation, different shapes of silicon structures were fabricated. The results were obtained with the single laser fluence of 354 mJ/cm, 495 mJ/cm, and 637 mJ/cm, the pulse repetition rate of 10 Hz, the laser exposure pulses of 30, 100, and 300, the laser wavelength of 1064 nm, and the pulse duration of 7-9 ns. The effects of the heat transfer and the radiation of laser interference plasma on silicon wafer surfaces were investigated. The equations of heat flow and radiation effects of laser plasma of interfering patterns in a four-beam laser interference distribution were proposed to describe their impacts on silicon wafer surfaces. The experimental results have shown that the laser fluence has to be properly selected for the fabrication of well-defined surface structures in a four-beam laser interference process. Laser interference patterns can directly fabricate different shape structures for their corresponding applications.en
dc.language.isoenen
dc.publisherAmerican Institute of Physics Inc.en
dc.relation.urlhttp://aip.scitation.org/doi/abs/10.1063/1.4937579?journalCode=japen
dc.rightsGreen - can archive pre-print and post-print or publisher's version/PDF-
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.subjectsiliconen
dc.subjectlaser impacten
dc.subjectsurface structureen
dc.subjectlaser ablationen
dc.subjectmaterials fabricationen
dc.titleEffects of laser fluence on silicon modification by four-beam laser interferenceen
dc.typeArticleen
dc.contributor.departmentChangchun University of Science and Technologyen
dc.contributor.departmentUniversity of Bedfordshireen
dc.contributor.departmentJiaotong-Liverpool Universityen
dc.identifier.journalJournal of Applied Physicsen
dc.date.updated2017-02-27T11:28:14Z-
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