2.50
Hdl Handle:
http://hdl.handle.net/10547/336165
Title:
Effect of pulse repetition rate on silicon wafer modification by four-beam laser interference
Authors:
Zhao, Le; Wang, Zuobin; Li, Wenjun; Yu, M.; Zhang, Z; Xu, J.; Yu, Y.; Weng, Z.; Li, S; Maple, Carsten; Li, D.; Yue, Y.
Abstract:
This paper discusses the effect of pulse repetition rates on silicon wafer modification by four-beam laser interference. In the work, four-beam laser interference was used to pattern single crystal silicon wafers for the fabrication of dots, and different laser pulse repetition rates were applied to the process in the air. The results were obtained from 10 laser exposure pulses with the single laser fluence of 283mJ/cm2, the pulse repetition rates were 1Hz, 5Hz and 10Hz, the laser wavelength was 1064nm and the pulse duration 7-9ns. The results have been observed using a scanning electron microscope (SEM) and optical microscope. They indicate that the laser pulse repetition rate has to be properly selected for the fabrication of the structures of dots using four-beam laser interference.
Affiliation:
Changchun University of Science & Technology; University of Bedfordshire
Citation:
Zhao, L., Wang, Z., Li, W., Yu, M., Zhang, Z., Xu, J., Yu, Y., Weng, Z., Li, S., Maple, C., Li, D., Yue, Y., (2013) "Effect of pulse repetition rate on silicon wafer modification by four-beam laser interference," Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO), 2013 International Conference on , Suzhou, China, 26-30 August.
Publisher:
IEEE
Issue Date:
Aug-2013
URI:
http://hdl.handle.net/10547/336165
DOI:
10.1109/3M-NANO.2013.6737385
Additional Links:
http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6737385
Type:
Conference papers, meetings and proceedings
Language:
en
ISBN:
9781479912100
Sponsors:
This work was supported by National Key Basic Research Program of China (973 Program No.2012CB326406), Special Development Program of Central Financial Support to Local Universities (No.2011-183), EU FP7 (LaserNaMiNo.247644; ECNANOMAN No.269219), International Science and Technology Cooperation Program of China (No.2012DFA11070), National Natural Science Foundation Program of China (No.60940035 and No.61176002), Doctoral Program of Higher Education of China (No.20112216110002), Jilin Provincial Science and Technology Program (No.20100703, No.201024, No.201115157, No.20090401, No.20110704 and No.20100703), Guangdong Science and Technology Program (No.2009B091300 006 and No.2011B010700101), Science and Technology Program of Changchun City (No.09GH07 and No.11KP04), and Program of Changchun University of Science and Tech nology (No.129666 and No.XJJLG201101).
Appears in Collections:
Centre for Research in Distributed Technologies (CREDIT)

Full metadata record

DC FieldValue Language
dc.contributor.authorZhao, Leen
dc.contributor.authorWang, Zuobinen
dc.contributor.authorLi, Wenjunen
dc.contributor.authorYu, M.en
dc.contributor.authorZhang, Zen
dc.contributor.authorXu, J.en
dc.contributor.authorYu, Y.en
dc.contributor.authorWeng, Z.en
dc.contributor.authorLi, Sen
dc.contributor.authorMaple, Carstenen
dc.contributor.authorLi, D.en
dc.contributor.authorYue, Y.en
dc.date.accessioned2014-11-26T13:53:48Z-
dc.date.available2014-11-26T13:53:48Z-
dc.date.issued2013-08-
dc.identifier.citationZhao, L., Wang, Z., Li, W., Yu, M., Zhang, Z., Xu, J., Yu, Y., Weng, Z., Li, S., Maple, C., Li, D., Yue, Y., (2013) "Effect of pulse repetition rate on silicon wafer modification by four-beam laser interference," Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO), 2013 International Conference on , Suzhou, China, 26-30 August.en
dc.identifier.isbn9781479912100-
dc.identifier.doi10.1109/3M-NANO.2013.6737385-
dc.identifier.urihttp://hdl.handle.net/10547/336165-
dc.description.abstractThis paper discusses the effect of pulse repetition rates on silicon wafer modification by four-beam laser interference. In the work, four-beam laser interference was used to pattern single crystal silicon wafers for the fabrication of dots, and different laser pulse repetition rates were applied to the process in the air. The results were obtained from 10 laser exposure pulses with the single laser fluence of 283mJ/cm2, the pulse repetition rates were 1Hz, 5Hz and 10Hz, the laser wavelength was 1064nm and the pulse duration 7-9ns. The results have been observed using a scanning electron microscope (SEM) and optical microscope. They indicate that the laser pulse repetition rate has to be properly selected for the fabrication of the structures of dots using four-beam laser interference.en
dc.description.sponsorshipThis work was supported by National Key Basic Research Program of China (973 Program No.2012CB326406), Special Development Program of Central Financial Support to Local Universities (No.2011-183), EU FP7 (LaserNaMiNo.247644; ECNANOMAN No.269219), International Science and Technology Cooperation Program of China (No.2012DFA11070), National Natural Science Foundation Program of China (No.60940035 and No.61176002), Doctoral Program of Higher Education of China (No.20112216110002), Jilin Provincial Science and Technology Program (No.20100703, No.201024, No.201115157, No.20090401, No.20110704 and No.20100703), Guangdong Science and Technology Program (No.2009B091300 006 and No.2011B010700101), Science and Technology Program of Changchun City (No.09GH07 and No.11KP04), and Program of Changchun University of Science and Tech nology (No.129666 and No.XJJLG201101).en
dc.language.isoenen
dc.publisherIEEEen
dc.relation.urlhttp://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6737385en
dc.subjectlaser interferenceen
dc.subjectlithographyen
dc.subjectpulse repetition rateen
dc.subjectsilicon wafer modificationen
dc.titleEffect of pulse repetition rate on silicon wafer modification by four-beam laser interferenceen
dc.typeConference papers, meetings and proceedingsen
dc.contributor.departmentChangchun University of Science & Technologyen
dc.contributor.departmentUniversity of Bedfordshireen
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