Anti-reflection structures fabricated by direct laser interference technology under different ambiances

2.50
Hdl Handle:
http://hdl.handle.net/10547/336164
Title:
Anti-reflection structures fabricated by direct laser interference technology under different ambiances
Authors:
Wang, Dapeng; Yue, Yong; Zhang, Ziang; Li, Dayou; Maple, Carsten; Wang, Zuobin
Abstract:
In this paper, we take the strategy of direct laser interference technology to modify the silicon surface under air and sulphur hexafluoride (SF6) gas ambiance conditions. With the investigation of optical properties, the silicon spike structures (known as black silicon) which were fabricated in the SF6 ambiance showed the excellent ability of reducing light reflection with a broadband spectrum. For comparison, well-defined microcone structures were fabricated in the air ambiance. After hydrofluoric (HF) acid wiping off the oxides on the surface, micro cone structures have shown the anti-reflection function as well and its reflective behaviour was dependent on the structural depth relatively. Due to a high impurities concentration of spike structures obtained in the SF6 ambiance, applications of sulphur-doped black silicon would be limited. To obtain large-scale uniform structures, direct laser interference technology in the air ambiance could be an alternative.
Affiliation:
University of Bedfordshire
Citation:
Wang, D., Yue, Y., Zhang, Z., Li, D., Maple, C., Wang, Z. (2013) 'Anti-reflection structures fabricated by direct laser interference technology under different ambiances,' Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO), 2013 International Conference on, Suzhou, China, 26-30 August.
Publisher:
IEEE
Issue Date:
Aug-2013
URI:
http://hdl.handle.net/10547/336164
DOI:
10.1109/3M-NANO.2013.6737388
Additional Links:
http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6737388
Type:
Conference papers, meetings and proceedings
Language:
en
ISBN:
9781479912100
Sponsors:
This work was supported by National Key Basic Research Program of China (973 Program No. 2012CB326400 and No. 2012CB326406), Special Development Program of Central Financial Support to Local Universities (No. 2011-183), EU FP7 (LaserNaMi No.247644; ECNANOMAN No.269219), International Science and Technology Cooperation Program of China (No. 2012DFA11070), National Natural Science Foundation Program of China (No. 60940035 and No. 61176002), Doctoral Program of Higher Education of China (No. 20112216110002), Jilin Provincial Science and Technology Program (No. 201115157, No. 20090401 and No. 20110704), Guangdong Science and Technology Program (No. 2009B091300006 and No. 2011B010700101), Science and Technology Program of Changchun City (No. 09GH07 and No. 11KP04), and Program of Changchun University of Science and Technology (No. 129666 and No. XJJLG201101).
Appears in Collections:
Centre for Research in Distributed Technologies (CREDIT)

Full metadata record

DC FieldValue Language
dc.contributor.authorWang, Dapengen
dc.contributor.authorYue, Yongen
dc.contributor.authorZhang, Ziangen
dc.contributor.authorLi, Dayouen
dc.contributor.authorMaple, Carstenen
dc.contributor.authorWang, Zuobinen
dc.date.accessioned2014-11-26T13:48:09Z-
dc.date.available2014-11-26T13:48:09Z-
dc.date.issued2013-08-
dc.identifier.citationWang, D., Yue, Y., Zhang, Z., Li, D., Maple, C., Wang, Z. (2013) 'Anti-reflection structures fabricated by direct laser interference technology under different ambiances,' Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO), 2013 International Conference on, Suzhou, China, 26-30 August.en
dc.identifier.isbn9781479912100-
dc.identifier.doi10.1109/3M-NANO.2013.6737388-
dc.identifier.urihttp://hdl.handle.net/10547/336164-
dc.description.abstractIn this paper, we take the strategy of direct laser interference technology to modify the silicon surface under air and sulphur hexafluoride (SF6) gas ambiance conditions. With the investigation of optical properties, the silicon spike structures (known as black silicon) which were fabricated in the SF6 ambiance showed the excellent ability of reducing light reflection with a broadband spectrum. For comparison, well-defined microcone structures were fabricated in the air ambiance. After hydrofluoric (HF) acid wiping off the oxides on the surface, micro cone structures have shown the anti-reflection function as well and its reflective behaviour was dependent on the structural depth relatively. Due to a high impurities concentration of spike structures obtained in the SF6 ambiance, applications of sulphur-doped black silicon would be limited. To obtain large-scale uniform structures, direct laser interference technology in the air ambiance could be an alternative.en
dc.description.sponsorshipThis work was supported by National Key Basic Research Program of China (973 Program No. 2012CB326400 and No. 2012CB326406), Special Development Program of Central Financial Support to Local Universities (No. 2011-183), EU FP7 (LaserNaMi No.247644; ECNANOMAN No.269219), International Science and Technology Cooperation Program of China (No. 2012DFA11070), National Natural Science Foundation Program of China (No. 60940035 and No. 61176002), Doctoral Program of Higher Education of China (No. 20112216110002), Jilin Provincial Science and Technology Program (No. 201115157, No. 20090401 and No. 20110704), Guangdong Science and Technology Program (No. 2009B091300006 and No. 2011B010700101), Science and Technology Program of Changchun City (No. 09GH07 and No. 11KP04), and Program of Changchun University of Science and Technology (No. 129666 and No. XJJLG201101).en
dc.language.isoenen
dc.publisherIEEEen
dc.relation.urlhttp://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6737388en
dc.subjectanti-reflection structuresen
dc.subjectblack siliconen
dc.subjectdirect laser interference technologyen
dc.subjectantireflection coatingsen
dc.subjectelemental semiconductorsen
dc.subjectimpuritiesen
dc.subjectlaser materials processingen
dc.subjectlight reflectionen
dc.subjectsiliconen
dc.titleAnti-reflection structures fabricated by direct laser interference technology under different ambiancesen
dc.typeConference papers, meetings and proceedingsen
dc.contributor.departmentUniversity of Bedfordshireen
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