2.50
Hdl Handle:
http://hdl.handle.net/10547/275814
Title:
Effects of polarization on four-beam laser interference lithography
Authors:
Wang, Dapeng; Wang, Zuobin; Zhang, Ziang; Yue, Yong; Li, Dayou; Maple, Carsten
Abstract:
This paper demonstrates that polarization plays an important role in the formation of interference patterns, pattern contrasts, and periods in four-beam interference lithography. Three different polarization modes are presented to study the effects of polarization on four-beam laser interference based on theoretical analysis, simulations, and experiments. A four-beam laser interference system was set up to modify the silicon surface. It was found that the secondary periodicity or modulation was the result of the misaligned or unequal incident angles only in the case of the TE-TE-TM-TM mode. The resulting patterns have shown a good correspondence with the theoretical analysis and simulations.
Affiliation:
Changchun University of Science and Technology, Changchun, China; Department of Computer Science and Technology, University of Bedfordshire
Citation:
Wang, D., Wang, Z., Zhang, Z., Yue, Y., Li, D. & Maple, C. (2013) 'Effects of polarization on four-beam laser interference lithography', Applied Physics Letters, 102 (8), pp.081903.
Publisher:
American Institute of Physics
Journal:
Applied Physics Letters
Issue Date:
2013
URI:
http://hdl.handle.net/10547/275814
DOI:
10.1063/1.4793752
Additional Links:
http://link.aip.org/link/APPLAB/v102/i8/p081903/s1&Agg=doi
Type:
Article
Language:
en
ISSN:
00036951
Appears in Collections:
Centre for Research in Distributed Technologies (CREDIT)

Full metadata record

DC FieldValue Language
dc.contributor.authorWang, Dapengen_GB
dc.contributor.authorWang, Zuobinen_GB
dc.contributor.authorZhang, Ziangen_GB
dc.contributor.authorYue, Yongen_GB
dc.contributor.authorLi, Dayouen_GB
dc.contributor.authorMaple, Carstenen_GB
dc.date.accessioned2013-03-25T11:18:29Z-
dc.date.available2013-03-25T11:18:29Z-
dc.date.issued2013-
dc.identifier.citationWang, D., Wang, Z., Zhang, Z., Yue, Y., Li, D. & Maple, C. (2013) 'Effects of polarization on four-beam laser interference lithography', Applied Physics Letters, 102 (8), pp.081903.en_GB
dc.identifier.issn00036951-
dc.identifier.doi10.1063/1.4793752-
dc.identifier.urihttp://hdl.handle.net/10547/275814-
dc.description.abstractThis paper demonstrates that polarization plays an important role in the formation of interference patterns, pattern contrasts, and periods in four-beam interference lithography. Three different polarization modes are presented to study the effects of polarization on four-beam laser interference based on theoretical analysis, simulations, and experiments. A four-beam laser interference system was set up to modify the silicon surface. It was found that the secondary periodicity or modulation was the result of the misaligned or unequal incident angles only in the case of the TE-TE-TM-TM mode. The resulting patterns have shown a good correspondence with the theoretical analysis and simulations.en_GB
dc.language.isoenen
dc.publisherAmerican Institute of Physicsen_GB
dc.relation.urlhttp://link.aip.org/link/APPLAB/v102/i8/p081903/s1&Agg=doien_GB
dc.rightsArchived with thanks to Applied Physics Lettersen_GB
dc.subjectelemental semiconductorsen_GB
dc.subjectlaser beamsen_GB
dc.titleEffects of polarization on four-beam laser interference lithographyen
dc.typeArticleen
dc.contributor.departmentChangchun University of Science and Technology, Changchun, Chinaen_GB
dc.contributor.departmentDepartment of Computer Science and Technology, University of Bedfordshireen_GB
dc.identifier.journalApplied Physics Lettersen_GB
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